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| inchange semiconductor isc product specification isc silicon npn darlington power transistor bdx83/a/b/c description high dc current gain- : h fe = 1000(min)@ i c = 5a collector-emitter sustaining voltage- : v ceo(sus) = 45v(min)- bdx83; 60v(min)- BDX83A 80v(min)- bdx83b; 100v(min)- bdx83c applications power switching hammer drivers series and shunt regulators audio amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit bdx83 45 BDX83A 60 bdx83b 80 v cbo collector-base voltage bdx83c 100 v bdx83 45 BDX83A 60 bdx83b 80 v ceo collector-emitter voltage bdx83c 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i cm collector current-peak 15 a i b b base current 250 ma p c collector power dissipation @ t c =25 125 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor bdx83/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdx83 45 BDX83A 60 bdx83b 80 v ceo(sus) collector-emitter sustaining voltage bdx83c i c = 100ma; i b = 0 100 v v ce( sat ) collector-emitter saturation voltage i c = 5a; i b = 10ma b 2.0 v v be( on )-1 base-emitter on voltage i c = 5a; v ce = 3v 2.8 v v be( on )-2 base-emitter on voltage i c = 10a; v ce = 3v 4.5 v bdx83 v ce = 45v; v be = -1.5v v ce = 45v; v be = -1.5v; t c = 150 0.5 3.0 BDX83A v ce = 60v; v be = -1.5v v ce = 60v; v be = -1.5v; t c = 150 0.5 3.0 bdx83b v ce = 80v; v be = -1.5v v ce = 80v; v be = -1.5v; t c = 150 0.5 3.0 i cev collector cutoff current bdx83c v ce = 100v; v be = -1.5v v ce = 100v; v be = -1.5v; t c = 150 0.5 3.0 ma bdx83 v ce = 20v; i b =0 b BDX83A v ce = 30v; i b =0 b bdx83b v ce = 40v; i b =0 b i ceo collector cutoff current bdx83c v ce = 50v; i b =0 b 1.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 5.0 ma h fe-1 dc current gain i c = 1a; v ce = 3v 750 h fe-2 dc current gain i c = 5a; v ce = 3v 1000 h fe-3 dc current gain i c = 10a; v ce = 3v 250 isc website www.iscsemi.cn 2 |
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